DIBL的音标

A threshold voltage model for short-channel MOSFET is developed by solving a 2-D Possion's equation. The derived DIBL factor can be used to analysis the influence of the parameters on short-channel effects.

通过求解二维泊松方程推导了一个简洁的短沟道MOS的阈值电压模型，得到的DIBL因子可用于分析参数对短沟道效应的影响。

The DMG structure coupling with the insulator halo, the threshold voltage roll-off and drain-induced-barrier-lowering ( DIBL) decrease and the sub-threshold characteristics have been improved.

由于DMG结构和介质Halo的相互耦合，阈值电压漂移和漏致势垒降低（DIBL：Drain-Induced-Barrier-Lowering）减小，亚阈值特性得到改善。

Compared with the traditional planar MOSFET's, MOSFET's with novel structures have better performance, such as improved SCE, ideal DIBL and sub-threshold slope, as well as higher driving ability.

和传统平面结构MOSFET相比，新结构MOSFET具有更好的性能（如改善的沟道效应（SCE），理想的漏诱生势垒降低效应（DIBL）和亚阈值特性）和更大的驱动电流等。